18085949. UPPER ELECTRODE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
UPPER ELECTRODE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
Sangki Nam of Seongnam-si (KR)
Younghyun Jo of Hwaseong-si (KR)
UPPER ELECTRODE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18085949 titled 'UPPER ELECTRODE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
Simplified Explanation
The abstract describes an upper electrode for a substrate processing apparatus that uses plasma. The upper electrode has a bottom surface with a center region and an edge region in a ring shape surrounding the center region. It also includes a protrusion portion in the edge region that extends towards the plasma and has a ring shape. The protrusion portion has a radial local maximum point called the first apex, and the distance between the first apex and the center axis of the upper electrode (called the first distance) is greater than the radius of the substrate.
- The upper electrode has a unique design with a protrusion portion that extends towards the plasma.
- The protrusion portion has a radial local maximum point called the first apex.
- The first distance, which is the distance between the first apex and the center axis of the upper electrode, is greater than the radius of the substrate.
Potential Applications
- Substrate processing apparatus using plasma
- Semiconductor manufacturing
- Thin film deposition
Problems Solved
- Improved plasma processing efficiency
- Enhanced uniformity of plasma distribution
- Reduced damage to the substrate
Benefits
- Higher quality and more uniform processing of substrates
- Increased productivity in semiconductor manufacturing
- Reduced substrate damage during processing
Original Abstract Submitted
An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.
