18080832. SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD
Organization Name
Inventor(s)
Myung Soo Noh of Suwon-si (KR)
No Young Chung of Hwaseong-si (KR)
Seok Yun Jeong of Osan-si (KR)
Young Han Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18080832 titled 'SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD
Simplified Explanation
The abstract describes a semiconductor device that consists of two unit cells. Each unit cell has a fin pattern, a gate pattern, and a contact. The gate patterns and contacts are arranged in a straight line, and a middle contact connects the two contacts.
- The semiconductor device comprises two unit cells with specific patterns and contacts.
- The gate patterns and contacts are arranged in a straight line.
- A middle contact connects the two contacts.
Potential Applications
This technology can be applied in various fields, including:
- Electronics manufacturing
- Semiconductor industry
- Integrated circuit design
Problems Solved
The semiconductor device addresses the following issues:
- Efficient arrangement of gate patterns and contacts
- Simplified connection between contacts
- Improved performance and functionality of semiconductor devices
Benefits
The benefits of this technology include:
- Enhanced efficiency in manufacturing and design processes
- Improved performance and functionality of semiconductor devices
- Simplified connection between contacts, leading to easier integration and assembly
Original Abstract Submitted
A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.
