18076062. SINTERED MATERIAL, SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SINTERED MATERIAL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SINTERED MATERIAL, SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SINTERED MATERIAL

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Changhwan Kim of Suwon-si (KR)

Takafumi Noguchi of Kanagawa Yokohama (JP)

Toshihiro Iizuka of Kanagawa Yokohama (JP)

Younseon Wang of Swuon-si (KR)

Kenichi Nagayama of Kanagawa Yokohama (JP)

SINTERED MATERIAL, SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SINTERED MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18076062 titled 'SINTERED MATERIAL, SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SINTERED MATERIAL

Simplified Explanation

The patent application describes a sintered material with high corrosion resistance, a method of manufacturing the material, a member for a semiconductor manufacturing apparatus, a method of manufacturing the member, a semiconductor manufacturing apparatus, and a method of manufacturing the apparatus.

  • The sintered material contains at least 50% yttrium oxyfluoride and has a relative density of at least 97.0% and a Vickers hardness of at least 5.0 GPa.
  • The method of manufacturing the sintered material involves forming a molded body using yttrium oxyfluoride powder with a particle size of 0.3 µm or less, and sintering the molded body under atmospheric pressure at a temperature of 800°C or lower.

Potential applications of this technology:

  • The sintered material can be used in semiconductor manufacturing apparatuses, where high corrosion resistance is required.
  • It can be used as a component in various parts of the semiconductor manufacturing process, such as chambers, electrodes, or other critical components.

Problems solved by this technology:

  • The sintered material provides high corrosion resistance, which is crucial in semiconductor manufacturing environments where corrosive gases or liquids are used.
  • The method of manufacturing the sintered material allows for the production of complex shapes and precise dimensions, ensuring compatibility with existing semiconductor manufacturing equipment.

Benefits of this technology:

  • The high corrosion resistance of the sintered material increases the lifespan and reliability of semiconductor manufacturing apparatuses.
  • The method of manufacturing allows for cost-effective production of the sintered material with high precision and complex shapes.
  • The use of yttrium oxyfluoride in the sintered material provides improved mechanical properties, such as high hardness, which enhances the durability of the material.


Original Abstract Submitted

Provided are a sintered material having high corrosion resistance, a method of manufacturing the sintered material, a member for a semiconductor manufacturing apparatus, a method of manufacturing a member for a semiconductor manufacturing apparatus, a semiconductor manufacturing apparatus, and a method of manufacturing a semiconductor manufacturing apparatus. The sintered material according to an embodiment includes 50 mass% or more of yttrium oxyfluoride, has a relative density of 97.0% or more, and has a Vickers hardness of 5.0 GPa or more. The method of manufacturing a sintered material according to an embodiment includes forming a molded body including yttrium oxyfluoride powder having a particle size of 0.3 µm or less, and sintering the molded body under an atmospheric pressure at a temperature of 800° C. or less.

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