18066487. INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
Organization Name
Inventor(s)
Seunghoon Yeon of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18066487 titled 'INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
Simplified Explanation
The abstract describes an integrated circuit device that includes a semiconductor substrate with through-silicon-via (TSV) structures. These TSV structures are arranged in two regions of the substrate, with different spacing between them. The first region has TSV structures spaced apart by a larger distance (first pitch) and includes an individual device placed between them. The second region has TSV structures spaced apart by a smaller distance (second pitch) and does not have an individual device between them.
- The integrated circuit device has a semiconductor substrate with TSV structures in two regions.
- The TSV structures in the first region are spaced apart by a larger distance (first pitch).
- There is an individual device between the TSV structures in the first region.
- The TSV structures in the second region are spaced apart by a smaller distance (second pitch).
- There is no individual device between the TSV structures in the second region.
Potential Applications:
- This integrated circuit device can be used in various electronic devices and systems that require high-density integration of components.
- It can be applied in microprocessors, memory devices, communication systems, and other semiconductor-based technologies.
Problems Solved:
- The design allows for efficient use of space on the semiconductor substrate by optimizing the arrangement of TSV structures and individual devices.
- It enables higher integration density and improved performance of the integrated circuit device.
Benefits:
- The integrated circuit device can achieve higher component density, leading to more compact and efficient electronic devices.
- It allows for improved performance and functionality due to the optimized arrangement of TSV structures and individual devices.
- The design provides flexibility in the placement and spacing of TSV structures, allowing for customization based on specific requirements.
Original Abstract Submitted
An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.
