18065152. SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jisoo Shin of Suwon-si (KR)

Hiromasa Shibuya of Suwon-si (KR)

Hyeong-ju Kim of Suwon-si (KR)

Kyung Bae Park of Suwon-si (KR)

Feifei Fang of Suwon-si (KR)

Sungyoung Yun of Suwon-si (KR)

Chul Joon Heo of Suwon-si (KR)

SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18065152 titled 'SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE

Simplified Explanation

The patent application describes a sensor-embedded display panel and an electronic device that incorporates this panel. The panel includes a light emitting element and a photosensor on a substrate. The light emitting element has a light emitting layer, while the photosensor has a photosensitive layer parallel to the light emitting layer. Both the light emitting element and the photosensor have portions of a first common auxiliary layer. The photosensitive layer consists of a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor, which form a pn junction.

  • The sensor-embedded display panel integrates a light emitting element and a photosensor on a single substrate.
  • The light emitting element and the photosensor share a common auxiliary layer, which is continuous along the substrate.
  • The photosensor includes a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor, forming a pn junction.

Potential applications of this technology:

  • Smartphones and tablets: The sensor-embedded display panel can be used in mobile devices to enable touch and gesture recognition, as well as ambient light sensing.
  • Wearable devices: This technology can be applied in smartwatches, fitness trackers, and other wearable devices to provide touch and light sensing capabilities.
  • Automotive displays: The sensor-embedded display panel can enhance the functionality of in-car displays by enabling touch input and automatic brightness adjustment based on ambient light conditions.

Problems solved by this technology:

  • Integration: The sensor-embedded display panel eliminates the need for separate touch and light sensors, reducing the complexity and cost of device manufacturing.
  • Space-saving: By combining the light emitting element and the photosensor on a single substrate, the overall size of the electronic device can be reduced.
  • Power efficiency: The integrated photosensor allows for automatic brightness adjustment, optimizing power consumption based on ambient light levels.

Benefits of this technology:

  • Improved user experience: The sensor-embedded display panel enables intuitive touch and gesture interactions, enhancing the usability of electronic devices.
  • Cost-effective manufacturing: By integrating multiple functionalities into a single component, the production cost of electronic devices can be reduced.
  • Energy efficiency: The automatic brightness adjustment based on ambient light conditions helps conserve battery life, extending the usage time of portable devices.


Original Abstract Submitted

Disclosed are a sensor-embedded display panel and an electronic device including the sensor-embedded display panel. The sensor-embedded panel may include a light emitting element and a photosensor on a substrate. The light emitting element may include a light emitting layer and the photosensor may include a photosensitive layer in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include respective portions of a first common auxiliary layer. The first common auxiliary layer may be continuous along the in-place direction of the substrate and under each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor. The non-fullerene n-type semiconductor may form a pn junction with the p-type semiconductor.