18062502. METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES
Organization Name
Inventor(s)
Andrew Kummel of San Diego CA (US)
Michael Breeden of La Jolla CA (US)
Victor Wang of Whittier CA (US)
Ravindra Kanjolia of North Andover MA (US)
Mansour Moinpour of San Jose CA (US)
Harsono Simka of Saratoga CA (US)
METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18062502 titled 'METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES
Simplified Explanation
The patent application describes a method of forming low resistivity metal films, specifically low resistivity ruthenium (Ru) films. The films are prepared using a two-step atomic layer deposition (ALD) process.
- Low resistivity ruthenium (Ru) films can be formed using a two-step ALD process.
- The first step involves nucleating the substrate using Ru(DMBD)(CO) + TBA.
- The second step involves increasing the thickness of the film using Ru(EtCp) + O.
- The resulting Ru films have resistivity close to that of bulk Ru.
- These films can be used in barrierless via-fills and M0/M1 interconnect layers.
Potential Applications
- Barrierless via-fills
- M0/M1 interconnect layers
Problems Solved
- Formation of low resistivity metal films
- Achieving resistivity close to that of bulk metal
Benefits
- Improved conductivity
- Suitable for various applications in the semiconductor industry
Original Abstract Submitted
Described are low resistivity metal layers/films, such as low resistivity ruthenium (Ru) layers/films, and methods of forming low resistivity metal films. Ru layers/films with close-to-bulk resistivity can be prepared on substrates using Ru(CpEt) + O ALD, as well as a two-step ALD process using Ru(DMBD)(CO) + TBA (tertiary butyl amine) to nucleate the substrate and Ru(EtCp) + O to increase layer/film thickness. The Ru layer/films and methods of preparing Ru layers/films described herein may be suitable for use in barrierless via-fills, as well as at M0/M1 interconnect layers.
