18060835. DIELECTRIC THIN FILM COMPRISING PEROVSKITE MATERIAL, CAPACITOR INCLUDING THE DIELECTRIC THIN FILM, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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DIELECTRIC THIN FILM COMPRISING PEROVSKITE MATERIAL, CAPACITOR INCLUDING THE DIELECTRIC THIN FILM, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kiyoung Lee of Seoul (KR)

Darrell G. Schlom of Ithaca NY (US)

Matthew R. Barone of Ithaca NY (US)

Myoungho Jeong of Seoul (KR)

DIELECTRIC THIN FILM COMPRISING PEROVSKITE MATERIAL, CAPACITOR INCLUDING THE DIELECTRIC THIN FILM, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18060835 titled 'DIELECTRIC THIN FILM COMPRISING PEROVSKITE MATERIAL, CAPACITOR INCLUDING THE DIELECTRIC THIN FILM, AND ELECTRONIC DEVICE INCLUDING THE CAPACITOR

Simplified Explanation

The patent application describes a thin film made of a perovskite material layer and a rocksalt layer, both containing at least two Group II elements. The content ratio of the Group II elements in the perovskite layer is the same as in the rocksalt layer.

  • Thin film with perovskite material layer and rocksalt layer
  • Both layers contain at least two Group II elements
  • The content ratio of Group II elements is the same in both layers

Potential Applications

  • Dielectric coatings for electronic devices
  • Optical coatings for lenses and mirrors
  • Energy storage devices

Problems Solved

  • Provides a method for creating a thin film with specific content ratios of Group II elements
  • Improves the performance and stability of dielectric materials

Benefits

  • Enhanced dielectric properties
  • Improved device performance and efficiency
  • Increased durability and stability of thin film coatings


Original Abstract Submitted

A dielectric thin film includes a stack structure of a perovskite material layer including at least two Group II elements and a rocksalt layer on the perovskite material layer and including at least two Group II elements. A first content ratio of the at least two Group II elements included in the perovskite material layer may be the same as a second content ratio of the at least two Group II elements included in the rocksalt layer.