18056181. INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS
Organization Name
Inventor(s)
Byounghak Hong of Albany NY (US)
Sooyoung Park of Clifton Park NY (US)
Kang-ill Seo of Albany NY (US)
WookHyun Kwon of Hwaseong-si (KR)
INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18056181 titled 'INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS
Simplified Explanation
The patent application describes integrated circuit devices and methods of forming them. The devices include a transistor stack on a substrate, with a first transistor and a second transistor stacked in a specific direction. The first transistor has first and second source/drain regions and a first channel region between them, with the first source/drain region made of a first metal layer. The second transistor has third and fourth source/drain regions and a second channel region between them, with the first and third source/drain regions overlapping each other in the specific direction. The transistor stack also includes a metal interconnector that connects the third source/drain region and the first metal layer of the first source/drain region.
- The patent application describes integrated circuit devices with a specific transistor stack configuration.
- The first transistor has a first metal layer in its source/drain region.
- The second transistor has overlapping source/drain regions with the first transistor.
- The transistor stack includes a metal interconnector connecting specific regions of the transistors.
Potential Applications
- Integrated circuit manufacturing
- Semiconductor industry
- Electronics manufacturing
Problems Solved
- Improved integration of transistors in an integrated circuit
- Enhanced connectivity between specific regions of the transistors
Benefits
- Higher efficiency in integrated circuit devices
- Improved performance and functionality of transistors
- Enhanced connectivity and integration in semiconductor devices
Original Abstract Submitted
Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a substrate and a transistor stack on the substrate. The transistor stack comprises a first transistor and a second transistor stacked in a first direction. The first transistor comprises first and second source/drain regions and a first channel region between the first and second source/drain regions, and the first source/drain region comprises a first metal layer. The second transistor comprises third and fourth source/drain regions and a second channel region between the third and fourth source/drain regions, and the first and third source/drain regions overlap each other in the first direction. The transistor stack further comprises a metal interconnector contacting the third source/drain region and the first metal layer of the first source/drain region material.
