18054730. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Joon-Sung Lim of Seongnam-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18054730 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The patent application discusses a three-dimensional semiconductor memory device and an electronic system that includes the device. Here is a simplified explanation of the abstract:
- The device consists of a stack structure made up of alternating electrode layers and inter-electrode insulating layers on a substrate.
- It also includes vertical semiconductor structures that extend into the stack structure and are adjacent to the substrate.
- Vertical conductive structures are arranged between the vertical semiconductor structures in a first direction and also extend into the stack structure.
- A conductive line portion on the stack structure connects the vertical conductive structures to each other in the first direction.
- The conductive line portion and the vertical conductive structures can be connected to form a single unit.
Potential applications of this technology:
- Memory devices in electronic systems such as computers, smartphones, and tablets.
- High-density data storage devices.
Problems solved by this technology:
- Increased memory capacity and density.
- Improved performance and speed of memory devices.
Benefits of this technology:
- Three-dimensional structure allows for more memory storage in a smaller footprint.
- Faster data access and retrieval.
- Improved overall performance and efficiency of electronic systems.
Original Abstract Submitted
A three-dimensional semiconductor memory device and an electronic system including the same are discussed. The device may include: a stack structure including electrode layers and inter-electrode insulating layers that are alternately stacked on a substrate; one or more vertical semiconductor structures that extend into the stack structure and are adjacent to the substrate; one or more vertical conductive structures arranged in a first direction between adjacent ones of the one or more vertical semiconductor structures and extending into the stack structure and are adjacent to the substrate; and a conductive line portion on the stack structure that extends in the first direction to connect the one or more vertical conductive structures to each other. The conductive line portion and the vertical conductive structures may be connected to form a single unit.
