18054348. TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Sheng-Lin Hsieh of Hsinchu (TW)
Ching-Pei Hsieh of Hsinchu (TW)
Kuan Jung Chen of Hsinchu (TW)
TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18054348 titled 'TRENCH ETCHING PROCESS FOR PHOTORESIST LINE ROUGHNESS IMPROVEMENT
Simplified Explanation
The patent application describes a method of forming a semiconductor device structure by using a resist structure with an anti-reflective coating (ARC) layer and a photoresist layer. The method involves patterning the photoresist layer to create a trench and then performing a hydrogen plasma treatment to smooth the sidewalls of the trench. The treatment is done at a temperature between 200°C and 600°C. Finally, the ARC layer is patterned using the patterned photoresist layer as an etch mask.
- The method involves forming a resist structure with an ARC layer and a photoresist layer.
- The photoresist layer is patterned to create a trench.
- A hydrogen plasma treatment is performed to smooth the sidewalls of the trench.
- The hydrogen plasma treatment is done at a temperature between 200°C and 600°C.
- The ARC layer is patterned using the patterned photoresist layer as an etch mask.
Potential Applications
- Semiconductor device manufacturing
- Integrated circuit fabrication
Problems Solved
- Sidewall roughness in trenches during semiconductor device fabrication
- Improving the quality and precision of patterned structures
Benefits
- Smoother sidewalls in trenches
- Enhanced precision in patterning
- Improved overall quality of semiconductor device structures
Original Abstract Submitted
A method of forming a semiconductor device structure includes forming a resist structure over a substrate, the resist structure includes an anti-reflective coating (ARC) layer and a photoresist layer over the ARC layer. The method further includes patterning the photoresist layer to form a trench therein. The method further includes performing a hydrogen plasma treatment to the patterned photoresist layer, wherein the hydrogen plasma treatment is configured to smooth sidewalls of the trench, and the hydrogen plasma treatment is performed at a temperature ranging from about 200° C. to about 600° C. The method further includes patterning the ARC layer using the patterned photoresist layer as a etch mask.
