18053919. Nonvolatile Memory Device And Operation Method Thereof simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
Nonvolatile Memory Device And Operation Method Thereof
Organization Name
Inventor(s)
Sang Soo Park of Hwaseong-si (KR)
Nonvolatile Memory Device And Operation Method Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 18053919 titled 'Nonvolatile Memory Device And Operation Method Thereof
Simplified Explanation
The patent application describes a nonvolatile memory device that consists of two planes, each containing multiple memory blocks.
- An address replacing circuit is included, which takes a first input address from an external controller and generates a replaced address based on the first input address and bad block information.
- An address decoder is also present, which controls word lines connected to a second memory block based on the replaced address.
- The first memory block of the first plane is identified as a bad block.
Potential applications of this technology:
- Nonvolatile memory devices are widely used in various electronic devices such as smartphones, tablets, and computers. This innovation can be applied to improve the performance and reliability of these devices by efficiently managing bad blocks in the memory.
Problems solved by this technology:
- Bad blocks in nonvolatile memory can significantly impact the overall performance and reliability of the device. This technology solves the problem of bad blocks by replacing the address of a bad block with a good block, ensuring that the memory device can still function properly.
Benefits of this technology:
- By replacing the address of a bad block, the nonvolatile memory device can continue to operate without any disruption caused by the faulty block.
- This technology improves the overall reliability and lifespan of the memory device by effectively managing bad blocks.
- It allows for better utilization of the memory capacity by bypassing the bad blocks and utilizing the good blocks instead.
Original Abstract Submitted
Disclosed is a nonvolatile memory device which includes a first plane that includes a plurality of memory blocks, a second plane that includes a plurality of memory blocks, an address replacing circuit that receives a first input address from an external controller, the first input address corresponding to a first memory block of the plurality of memory blocks of the first plane from an external controller and outputs a replaced address based on the first input address and bad block information, and an address decoder that controls word lines connected with a second memory block based on the replaced address, the word lines corresponding to the replaced address from among the plurality of memory blocks of the second plane. The first memory block of the first plane is a bad block.
