18053744. IMAGE SENSOR INCLUDING A BURIED GATE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR INCLUDING A BURIED GATE
Organization Name
Inventor(s)
HYUKSOON Choi of SUWON-SI (KR)
IMAGE SENSOR INCLUDING A BURIED GATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18053744 titled 'IMAGE SENSOR INCLUDING A BURIED GATE
Simplified Explanation
The patent application describes an image sensor with a unique structure for improved photoelectric conversion. Here are the key points:
- The image sensor has a semiconductor substrate with a photoelectric conversion region.
- A floating diffusion region is located within the substrate, adjacent to the first surface.
- A buried gate structure is present in a buried gate trench that extends from the first surface towards the interior of the substrate.
- The buried gate structure includes a first buried gate electrode in a trench adjacent to one side of the floating diffusion region.
- A second buried gate electrode is present in a trench spaced apart from the first trench and adjacent to the opposite side of the floating diffusion region.
Potential applications of this technology:
- Image sensors in digital cameras and smartphones.
- Surveillance cameras and security systems.
- Medical imaging devices.
- Industrial inspection and quality control systems.
Problems solved by this technology:
- Improved photoelectric conversion in image sensors.
- Enhanced sensitivity and signal-to-noise ratio.
- Reduction of noise and interference in image capture.
Benefits of this technology:
- Higher quality and more accurate image capture.
- Improved low-light performance.
- Enhanced overall performance of image sensors.
- Potential for smaller and more compact image sensor designs.
Original Abstract Submitted
An image sensor includes a semiconductor substrate including a first surface and a second surface and having a photoelectric conversion region disposed therein. A floating diffusion region is disposed within the semiconductor substrate. The floating diffusion region is adjacent to the first surface. A buried gate structure is disposed within a buried gate trench extending from the first surface of the semiconductor substrate towards an interior of the semiconductor substrate, the buried gate structure including a first buried gate electrode inside a first buried gate trench adjacent to a first side part of the floating diffusion region, and a second buried gate electrode inside a second buried gate trench spaced apart from the first buried gate trench and adjacent to a second side part of the floating diffusion region, the second side part being opposite to the first side part.
