18052957. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

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SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Ha Hoang of Kuwana Mie (JP)

Kazuhiro Matsuo of Kuwana Mie (JP)

Kenichiro Toratani of Yokkaichi Mie (JP)

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18052957 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The patent application describes a semiconductor device that includes conductors, a semiconductor, an insulator, and an insulation region. The semiconductor contains a metal oxide and is in contact with the conductors. The insulation region is surrounded by the semiconductor and is also in contact with one of the conductors. The concentration of a specific element in the metal oxide is higher in a certain portion of the semiconductor compared to another portion.

  • The semiconductor device includes first to third conductors, a semiconductor, a first insulator, and an insulation region.
  • The semiconductor contains a metal oxide and is in contact with the first and third conductors.
  • The insulation region is surrounded by the semiconductor and is in contact with the first conductor.
  • The semiconductor has a first portion, a second portion, and an insulation region in between.
  • The concentration of a specific element in the metal oxide is higher in the second portion than in the first portion.

Potential applications of this technology:

  • Semiconductor devices and integrated circuits
  • Electronics and electrical systems
  • Power electronics and energy conversion systems
  • Communication systems and devices

Problems solved by this technology:

  • Improved performance and efficiency of semiconductor devices
  • Enhanced conductivity and functionality of the metal oxide semiconductor
  • Better control over the concentration of specific elements in the semiconductor

Benefits of this technology:

  • Higher performance and efficiency in semiconductor devices
  • Improved conductivity and functionality of the metal oxide semiconductor
  • Enhanced control over the concentration of specific elements in the semiconductor


Original Abstract Submitted

In general, according to one embodiment, a semiconductor device includes first to third conductors, a semiconductor, a first insulator, and an insulation region. The semiconductor includes a metal oxide and extends in the first direction to be in contact with the first conductor and the third conductor. The insulation region is surrounded by the semiconductor and extends in the first direction to be in contact with the first conductor. The semiconductor includes a first portion and a second portion defined between the first portion and the insulation region. A concentration of a first element contained in the metal oxide of the semiconductor is higher in the second portion than in the first portion.

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