18052424. METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
Hidemoto Tomita of Nisshin-shi (JP)
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18052424 titled 'METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of manufacturing a silicon carbide semiconductor device. Here are the key points:
- The method involves forming a constituent layer and then forming a super junction structure.
- To form the super junction structure, a film-forming mask is applied to the constituent layer.
- An opening portion is created in the film-forming mask.
- A mask-forming trench is formed in the constituent layer, and the surrounding portion of the constituent layer becomes a silicon carbide mask through etching using the film-forming mask.
- Impurities are implanted into the bottom surface of the mask-forming trench to create a second-conductivity-type column region.
- The portion of the constituent layer where the silicon carbide mask is formed is then removed.
Potential applications of this technology:
- Silicon carbide semiconductor devices are used in various applications such as power electronics, automotive systems, renewable energy, and high-frequency communications.
- This method can be used to manufacture more efficient and high-performance silicon carbide devices.
Problems solved by this technology:
- The method allows for the formation of a super junction structure in a silicon carbide semiconductor device.
- The use of a silicon carbide mask helps in achieving precise and controlled doping of the column region.
Benefits of this technology:
- The super junction structure improves the performance and efficiency of the silicon carbide semiconductor device.
- The method provides a reliable and cost-effective way to manufacture silicon carbide devices.
- The use of a silicon carbide mask allows for precise control over the doping process, resulting in better device performance.
Original Abstract Submitted
A method of manufacturing a silicon carbide semiconductor device includes forming a constituent layer and forming a super junction structure. The formation of the super junction structure includes forming a film-forming mask on the constituent layer, forming an opening portion at the film-forming mask, forming a mask-forming trench at the constituent layer and adopting a portion of the constituent layer surrounding the mask-forming trench as a silicon carbide mask through etching by adopting the film-forming mask, forming a second-conductivity-type column region by ion implantation of impurities at a bottom surface of the mask-forming trench by adopting an ion-implantation mask having the film-forming mask and the silicon carbide mask, and removing a portion of the constituent layer where the silicon carbide mask is formed.
