18049366. FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
FERROELECTRIC MEMORY DEVICE
Organization Name
Inventor(s)
Musarrat Hasan of Sejong-si (KR)
FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18049366 titled 'FERROELECTRIC MEMORY DEVICE
Simplified Explanation
The abstract describes a ferroelectric memory device that includes several layers on a substrate, each with different crystal structures.
- The device includes a substrate with source/drain regions.
- An interface layer is placed on the substrate.
- A high dielectric layer is placed on the interface layer.
- A ferroelectric layer is placed on the high dielectric layer.
- A gate electrode layer is placed on the ferroelectric layer.
- The high dielectric layer and the ferroelectric layer have different crystal structures.
Potential applications of this technology:
- Memory devices: The ferroelectric memory device described in the patent application can be used in various memory applications, such as non-volatile memory or random access memory.
Problems solved by this technology:
- Compatibility: The different crystal structures of the high dielectric layer and the ferroelectric layer allow for improved compatibility and performance of the memory device.
- Stability: The use of a ferroelectric layer provides stability and reliability to the memory device.
Benefits of this technology:
- Improved performance: The use of different crystal structures in the layers of the memory device can enhance its performance, such as faster read/write speeds and lower power consumption.
- Increased stability: The ferroelectric layer adds stability and reliability to the memory device, ensuring data retention even in the absence of power.
- Compatibility: The design of the memory device allows for better compatibility with other components, leading to improved overall system performance.
Original Abstract Submitted
A ferroelectric memory device according to the inventive concept includes a substrate having source/drain regions, an interface layer on the substrate, a high dielectric layer on the interface layer, a ferroelectric layer on the high dielectric layer, and a gate electrode layer on the ferroelectric layer. The high dielectric layer and the ferroelectric layer have phases of different crystal structures.
