18048430. ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Felix Julian Schupp of Adliswil (CH)

Noelia Vico Trivino of Zurich (CH)

Matthias Mergenthaler of Zurich (CH)

Andreas Fuhrer Janett of Rueschlikon (CH)

ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18048430 titled 'ISOLATED BOTTOM CORNER GATES FOR SPIN-QUBITS IN A FIN

Simplified Explanation

The qubit device described in the patent application includes isolated bottom corner gates on a semiconductor fin structure, allowing for precise control of quantum dots for charge transport and manipulation.

  • Semiconductor substrate with a semiconductor fin perpendicular to the top surface
  • First gate at one corner of the fin, second gate at the opposite corner, both used to control a quantum dot near the top of the fin
  • Third gate at the first corner with a contact for charge transport to a second quantum dot near the bottom of the fin
  • Gates are electrically isolated from each other for independent control of quantum dots

Potential Applications

This technology could be applied in quantum computing, quantum communication, and quantum sensing applications.

Problems Solved

This innovation solves the challenge of precise control and manipulation of quantum dots in qubit devices, enabling more efficient and reliable quantum operations.

Benefits

The use of isolated bottom corner gates allows for improved accuracy and stability in controlling quantum dots, leading to enhanced performance of qubit devices.

Potential Commercial Applications

Potential commercial applications of this technology include quantum computers, quantum sensors, and quantum communication devices.

Possible Prior Art

One possible prior art for this technology could be the use of traditional gate structures for controlling quantum dots in qubit devices.

Unanswered Questions

1. How does the size and spacing of the gates impact the performance of the qubit device? 2. What materials are used for the semiconductor substrate and fin structure, and how do they affect the overall functionality of the device?


Original Abstract Submitted

A qubit device or system having isolated bottom corner gates includes a semiconductor substrate and a semiconductor fin perpendicularly adjoining a top surface of the substrate. The qubit device also includes a first gate located at a first corner between a first side of the fin and the top surface of the substrate, and a second gate located at a second corner between a second, opposite side of the fin and the top surface of the substrate. The first and second gates are electrically isolated from each other and used to control a first quantum dot near the top of the fin. A third gate located at the first corner has a contact for accumulating a channel to facilitate charge transport to and from a second quantum dot located near the bottom of the fin accumulated using the first and second gates.