18046526. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)

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IMAGE SENSOR

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Minjun Choi of Hwaseong-si (KR)

Myunglae Chu of Hwaseong-si (KR)

Seoksan Kim of Suwon-si (KR)

Minwoong Seo of Hwaseong-si (KR)

Jiyoun Song of Seoul (KR)

Hyunyong Jung of Seoul (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18046526 titled 'IMAGE SENSOR

Simplified Explanation

The abstract describes an image sensor that includes a pixel array with multiple pixels. Each pixel has an organic photodiode and a silicon photodiode, along with floating diffusion nodes, a conversion gain transistor, and a driving transistor. The sensor adjusts the sensitivity of the organic photodiode based on an external voltage and accumulates charges generated by the silicon and organic photodiodes in separate floating diffusion nodes. The conversion gain transistor connects the two nodes, and the driving transistor generates a pixel signal based on the voltage of the first floating diffusion node.

  • An image sensor with a pixel array and multiple pixels
  • Each pixel includes an organic photodiode and a silicon photodiode
  • The sensitivity of the organic photodiode is adjusted using an external voltage
  • Charges generated by the silicon photodiode are accumulated in one floating diffusion node
  • Charges generated by the organic photodiode are accumulated in another floating diffusion node
  • A conversion gain transistor connects the two floating diffusion nodes
  • A driving transistor generates a pixel signal based on the voltage of the first floating diffusion node

Potential Applications

  • Digital cameras
  • Smartphone cameras
  • Surveillance cameras
  • Medical imaging devices

Problems Solved

  • Adjusting the sensitivity of an organic photodiode in an image sensor
  • Accumulating charges generated by different types of photodiodes in separate nodes
  • Generating accurate pixel signals based on the voltage of the floating diffusion nodes

Benefits

  • Improved image quality and sensitivity
  • Enhanced performance in low-light conditions
  • More accurate and efficient image capturing


Original Abstract Submitted

An image sensor includes a pixel array in which a plurality of pixels are arranged. Each of the plurality of pixels includes an organic photodiode of which a sensitivity is adjusted based on an external voltage, a silicon photodiode, first and second floating diffusion nodes, a conversion gain transistor, and a driving transistor. Charges generated by the silicon photodiode are accumulated in the first floating diffusion node. Charges generated by the organic photodiode are accumulated in the second floating diffusion node. One end of the conversion gain transistor is connected to the first floating diffusion node and the other end connected is connected to the second floating diffusion node. The driving transistor is configured to generate a pixel signal corresponding to a voltage of the first floating diffusion node.