18039202. METHOD OF FORMING A THIN FILM simplified abstract (Microsoft Technology Licensing, LLC)
Contents
METHOD OF FORMING A THIN FILM
Organization Name
Microsoft Technology Licensing, LLC
Inventor(s)
METHOD OF FORMING A THIN FILM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18039202 titled 'METHOD OF FORMING A THIN FILM
Simplified Explanation
Abstract Explanation
This patent application describes a method for creating a thin film of material on a semiconductor substrate. The method involves depositing a thin film of metal onto the substrate's surface in an ultra-high vacuum environment. The substrate is cooled to a temperature of 260 K or lower during the deposition process. This cooling allows for the creation of an atomically flat and highly uniform thin film. The patent also mentions that a device can be obtained using this method.
Bullet Points
- Method for forming a thin film of material on a semiconductor substrate
- Thin film deposition is performed in an ultra-high vacuum
- Substrate is cooled to a temperature of 260 K or lower during deposition
- Cooling enables the creation of an atomically flat and uniform thin film
- Device can be obtained using this method
Potential Applications
- Semiconductor manufacturing
- Thin film electronics
- Optoelectronics
- Solar cells
- Microelectronics
Problems Solved
- Achieving an atomically flat and uniform thin film on a semiconductor substrate
- Ensuring a high-quality deposition process
- Improving the performance and reliability of semiconductor devices
Benefits
- Atomically flat and highly uniform thin film
- Improved device performance and reliability
- Enhanced manufacturing capabilities
- Potential for advancements in various electronic and optoelectronic technologies
Original Abstract Submitted
A method of forming a thin film of material on a surface of a substrate, the substrate comprising a semiconductor, comprises: depositing a thin film of metal on the surface of the substrate, wherein the deposition is performed in an ultra-high vacuum, and wherein the substrate is at a temperature of less than or equal to 260 K during the deposition. Cooling the substrate during deposition of the thin film of metal may allow for an atomically flat and very uniform thin film to be obtained. Also provided is a device obtainable by the method.
