17994884. METHOD FOR USING NAND FLASH MEMORY SRAM IN SOLID STATE DRIVE CONTROLLER simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)

METHOD FOR USING NAND FLASH MEMORY SRAM IN SOLID STATE DRIVE CONTROLLER

Organization Name

HUAWEI TECHNOLOGIES CO., LTD.

Inventor(s)

Jea Woong Hyun of Los Altos CA (US)

Chun Liu of San Jose CA (US)

Chaohong Hu of San Jose CA (US)

Xin Liao of San Jose CA (US)

METHOD FOR USING NAND FLASH MEMORY SRAM IN SOLID STATE DRIVE CONTROLLER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17994884 titled 'METHOD FOR USING NAND FLASH MEMORY SRAM IN SOLID STATE DRIVE CONTROLLER

Simplified Explanation

The abstract describes a method for improving the performance of a Solid State Drive (SSD) controller by utilizing on-die Static Random Access Memory (SRAM) in NAND flash memory devices. The method includes a write operation and a garbage collection method.

• In the write operation method, data is stored in the on-die SRAM of the NAND flash device instead of the on-chip SRAM of the controller. This allows for faster programming into the NAND flash memory and enables immediate read operations on the data while it is still in the on-die SRAM.

• The garbage collection method involves reading blocks of data from multiple source NAND flash devices and storing them in the on-die SRAM of a destination NAND flash device. Once a certain limit of blocks has been reached, the destination NAND flash device programs the blocks from the on-die SRAM into the NAND flash memory.

Potential applications of this technology:

• Solid State Drives (SSDs) in various electronic devices such as computers, laptops, and smartphones.
• Data storage systems that utilize NAND flash memory.

Problems solved by this technology:

• Improves the performance of SSD controllers by utilizing on-die SRAM in NAND flash memory devices.
• Enables faster write operations and immediate read operations on data stored in the on-die SRAM.

Benefits of this technology:

• Faster programming of data into NAND flash memory.
• Improved overall performance of SSD controllers.
• Enhanced efficiency in garbage collection processes for NAND flash memory devices.

Original Abstract Submitted

Write operation and garbage collection methods are provided for a Solid State Drive (SSD) controller of a SSD having Not-AND (NAND) flash memory devices with on-die Static Random Access Memory (SRAM) and NAND flash memory. In the write operation method, a received block of data is stored in on-die SRAM of the NAND flash device, rather than in on-chip SRAM of the controller, prior to programming into NAND flash memory. Until programmed into NAND flash memory, the block of data remains available in the on-die SRAM to fulfill an ‘immediate read’ operation, if received. In the garbage collection method, blocks of data are read from one or more source NAND flash devices and stored in on-die SRAM of a destination NAND flash device until a limit of such blocks has been reached, then the destination NAND flash device programs the blocks from the on-die SRAM into NAND flash memory.