17993473. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Dong Soo Kim of Gyeonggi-do (KR)
Mun Gi Sim of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17993473 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The present invention relates to a semiconductor device and a method of fabricating the same. The device includes a substrate with a trench, a gate dielectric layer formed along the sidewall and bottom surface of the trench, a lower gate electrode made of a first metal nitride with a first grain size, an upper gate electrode partially filling the trench and made of a second metal nitride with a second grain size larger than the first grain size, and a capping layer filling the remaining portion of the trench.
- The semiconductor device includes a trench structure with improved electrical characteristics.
- The gate dielectric layer enhances the performance of the device.
- The lower gate electrode made of a first metal nitride provides stability and conductivity.
- The upper gate electrode made of a second metal nitride with a larger grain size improves the device's performance.
- The capping layer fills the remaining trench space, providing protection and stability to the device.
Potential Applications
This technology can be applied in various semiconductor devices, including but not limited to:
- Integrated circuits (ICs)
- Transistors
- Memory devices
- Microprocessors
Problems Solved
The semiconductor device and fabrication method address the following issues:
- Improving electrical characteristics of the device
- Enhancing stability and conductivity of the gate electrodes
- Optimizing performance by utilizing different metal nitrides with varying grain sizes
- Providing protection and stability to the device through the capping layer
Benefits
The use of this technology offers several advantages:
- Improved electrical characteristics of the semiconductor device
- Enhanced stability and conductivity of the gate electrodes
- Better performance due to the utilization of different metal nitrides with varying grain sizes
- Increased protection and stability provided by the capping layer
Original Abstract Submitted
Embodiments of the present invention provides a semiconductor device with improved electrical characteristics and a method of fabricating the same. A semiconductor device according to an embodiment of the present invention comprises: a substrate including a trench; a gate dielectric layer formed along a sidewall surface and a bottom surface of the trench; a lower gate electrode filling a lower portion of the trench over the gate dielectric layer and formed of a first metal nitride, the first metal nitride having a first grain size; an upper gate electrode partially filling the trench over the lower gate electrode, including a low work function control element, and formed of a second metal nitride, the second metal nitride having a second grain size bigger than the first grain size; and a capping layer gap-filling the remainder of the trench over the upper gate electrode.
