17989061. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jinwoo Lee of Suwon-si (KR)

Jooheon Kang of Seoul (KR)

Donggeon Gu of Hwaseong-si (KR)

Doyoon Kim of Hwaseong-si (KR)

Yumin Kim of Seoul (KR)

Suseong Noh of Suwon-si (KR)

Changyup Park of Hwaseong-si (KR)

Hyunjae Song of Hwaseong-si (KR)

Dongho Ahn of Hwaseong-si (KR)

Myunghun Woo of Suwon-si (KR)

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17989061 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a lower structure, a stack structure, and a channel structure. The stack structure consists of alternating layers of gate layers and interlayer insulating layers, while the channel structure is a hole passing through the stack structure.

• The channel structure includes a variable resistance material layer, a data storage material layer, and a channel layer.
• The variable resistance material layer contains a second element, different from the first element present in the channel layer, as well as oxygen and oxygen vacancies.
• The data storage material layer includes both the first and second elements, oxygen, and oxygen vacancies.

Potential applications of this technology:

• Memory devices: The variable resistance material layer and data storage material layer can be used for data storage in memory devices.
• Logic devices: The semiconductor device can be utilized in logic circuits for performing computational tasks.

Problems solved by this technology:

• Improved data storage: The use of a variable resistance material layer and a data storage material layer enhances the data storage capabilities of the semiconductor device.
• Efficient logic operations: The stack structure and channel structure enable efficient logic operations in the semiconductor device.

Benefits of this technology:

• Higher performance: The semiconductor device offers improved performance due to the presence of the variable resistance material layer and data storage material layer.
• Enhanced functionality: The device can be used for both memory and logic applications, providing versatility in its usage.

Original Abstract Submitted

A semiconductor device includes a lower structure, a stack structure including gate layers and interlayer insulating layers alternately stacked on the lower structure in a first direction, and a channel structure in a channel hole passing through the stack structure. The channel structure includes a variable resistance material layer in the channel hole, a data storage material layer between the variable resistance material layer and a sidewall of the channel hole, and a channel layer between the data storage material layer and the sidewall of the channel hole, the channel layer includes a first element, the variable resistance material layer includes a second element, different from the first element, oxygen, and oxygen vacancies, and the data storage material layer includes the first element, the second element, oxygen, and oxygen vacancies.