17988797. PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
JIN-YOUNG Chun of SUWON-SI (KR)
PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17988797 titled 'PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
Simplified Explanation
The abstract describes a non-volatile memory device that includes various components such as memory cells, inverters, transistors, and a control circuit. The device is designed to store and retrieve data efficiently.
- The memory device includes a memory cell and a bit line for data storage.
- A first cross-coupled inverter is used to store the data sensed from the memory cell.
- The first and second transistors are connected to the ends of the first cross-coupled inverter and transmit a ground voltage to those ends.
- A control circuit operates the transistors during the initialize and precharge periods to discharge the sensing node and precharge the bit line.
Potential applications of this technology:
- Non-volatile memory devices can be used in various electronic devices such as computers, smartphones, and tablets.
- The technology can be applied in data storage systems, allowing for efficient and reliable data storage.
Problems solved by this technology:
- The non-volatile memory device provides a reliable and efficient way to store and retrieve data.
- The control circuit ensures proper operation during the initialize and precharge periods, improving the overall performance of the memory device.
Benefits of this technology:
- The memory device offers non-volatile storage, meaning data is retained even when power is lost.
- The efficient operation of the memory device allows for faster data access and retrieval.
- The control circuit ensures proper initialization and precharging, enhancing the reliability and performance of the memory device.
Original Abstract Submitted
A non-volatile memory device includes: a memory cell; a bit line connected to the memory cell; a first cross coupled inverter for storing data sensed from the memory cell through a sensing node connected to the bit line; a first transistor and a second transistor respectively connected to respective ends of the first cross coupled inverter and respectively transmitting a ground voltage to respective ends of the first cross coupled inverter; and a control circuit for operating the first transistor and the second transistor at least once for at least one of an initialize period in which the sensing node is discharged and a precharge period in which the bit line is precharged.