17986761. DISPLAY DEVICE simplified abstract (Samsung Display Co., Ltd.)
Contents
DISPLAY DEVICE
Organization Name
Inventor(s)
Keun Woo Kim of Yongin-si (KR)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17986761 titled 'DISPLAY DEVICE
Simplified Explanation
The patent application describes a display device that includes a substrate, a buffer layer, a driving transistor, and a switching transistor. The buffer layer consists of two layers - a first layer made of silicon nitride and a second layer made of silicon oxide. The first semiconductor pattern of the driving transistor is only on top of the second buffer layer, while both the first and second buffer layers are under the second semiconductor pattern of the switching transistor.
- The display device includes a substrate, buffer layer, driving transistor, and switching transistor.
- The buffer layer consists of two layers - silicon nitride and silicon oxide.
- The first semiconductor pattern of the driving transistor is on top of the second buffer layer.
- Both the first and second buffer layers are under the second semiconductor pattern of the switching transistor.
Potential applications of this technology:
- Display devices in electronic devices such as smartphones, tablets, and televisions.
Problems solved by this technology:
- Provides a simplified structure for display devices.
- Improves the performance and efficiency of the display device.
Benefits of this technology:
- Simplified structure reduces manufacturing complexity and cost.
- Improved performance and efficiency enhance the user experience.
- Enables the production of high-quality display devices.
Original Abstract Submitted
A display device includes: a substrate; a buffer layer on the substrate; a driving transistor on the buffer layer and including a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode; and a switching transistor on the buffer layer and spaced apart from the driving transistor, the switching transistor including a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode, wherein the buffer layer includes a first buffer layer including silicon nitride and a second buffer layer including silicon oxide, only the second buffer layer is under the first semiconductor pattern of the driving transistor, and the first buffer layer and the second buffer layer are under the second semiconductor pattern of the switching transistor.
