17986556. STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Hyungseuk Kim of Suwon-si (KR)
STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17986556 titled 'STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a storage device that includes a memory cell array, a physical unclonable function (PUF) circuit, and a memory controller. The PUF circuit outputs PUF data based on the voltage difference between two memory cells that have the same programmed data. The memory controller receives the PUF data and programs it or its inverted value to one of the memory cells based on the value of the PUF data.
- The storage device includes a memory cell array with multiple memory cells connected to word lines and bit lines.
- A physical unclonable function (PUF) circuit is included, which generates PUF data based on the voltage difference between two memory cells that have the same programmed data.
- The PUF data is then received by a memory controller, which can program the PUF data or its inverted value to one of the memory cells based on the value of the PUF data.
Potential Applications
- Secure authentication systems
- Anti-counterfeiting measures
- Secure storage of sensitive data
Problems Solved
- Provides a secure and unique identifier for authentication purposes
- Prevents unauthorized access and cloning of data
- Enhances the security of storage devices
Benefits
- Improved security and protection against unauthorized access
- Unique and unclonable identifier for authentication
- Enhanced data protection and anti-counterfeiting measures
Original Abstract Submitted
A storage device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines; a physical unclonable function (PUF) circuit configured to output PUF data based on a voltage difference between two memory cells from among the plurality of memory cells, the two memory cells being connected to a word line from among the plurality of word lines and two bit lines from among the plurality of bit lines, and to which a same data are programmed; and a memory controller configured to receive the PUF data from the PUF circuit, and program the PUF data or an inverted value of the PUF data to one of the two memory cells based on a value of the PUF data.
