17984086. PIXEL ARRAY AND DEVICES INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
PIXEL ARRAY AND DEVICES INCLUDING THE SAME
Organization Name
Inventor(s)
Hwanwoong Kim of Suwon-si (KR)
Seungjoon Lee of Suwon-si (KR)
PIXEL ARRAY AND DEVICES INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17984086 titled 'PIXEL ARRAY AND DEVICES INCLUDING THE SAME
Simplified Explanation
The patent application describes a pixel array with pixels arranged in a matrix shape. The pixels are separated by front deep trench isolation (FDTI). Each pixel includes various components such as a floating diffusion region, photoelectric conversion elements, charge transfer transistors, source follower transistor, and other transistors.
- The pixel array is arranged in a matrix shape with pixels separated by FDTI.
- Each pixel includes a floating diffusion region, photoelectric conversion elements, charge transfer transistors, source follower transistor, and other transistors.
- The transistors are formed in different sub-pixel regions.
- The sub-pixel regions are separated by FDTI.
Potential applications of this technology:
- Image sensors in digital cameras and smartphones.
- Display panels in televisions and monitors.
- Medical imaging devices.
- Surveillance cameras.
Problems solved by this technology:
- Improved pixel isolation and reduced crosstalk between pixels.
- Enhanced image quality and accuracy.
- Increased pixel density and resolution.
Benefits of this technology:
- Higher quality and more accurate images.
- Improved pixel performance and efficiency.
- Increased pixel density for sharper and more detailed images.
- Better overall image sensor performance.
Original Abstract Submitted
A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.
