17983520. SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES
Organization Name
Inventor(s)
Kwang Ho Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17983520 titled 'SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES
Simplified Explanation
The patent application describes a semiconductor device that includes multiple blocks on a substrate, with trenches between them. Conductive patterns are formed inside the trenches, and the outermost trench is positioned higher than the adjacent trench. Each block consists of insulating layers and gate electrodes stacked alternately, with pillars passing through them in a direction perpendicular to the substrate's surface.
- The semiconductor device includes multiple blocks on a substrate.
- Trenches are present between the blocks.
- Conductive patterns are formed inside the trenches.
- The outermost trench is positioned higher than the adjacent trench.
- Each block consists of alternating insulating layers and gate electrodes.
- Pillars pass through the insulating layers and gate electrodes in a perpendicular direction.
Potential Applications
This technology has potential applications in various semiconductor devices, including:
- Integrated circuits
- Microprocessors
- Memory devices
- Power devices
- Sensors
Problems Solved
The described semiconductor device addresses several challenges in the field, such as:
- Efficient utilization of space on the substrate
- Improved electrical connectivity between blocks
- Enhanced performance and functionality of semiconductor devices
- Simplified manufacturing processes
Benefits
The use of this technology offers several benefits, including:
- Increased integration density of semiconductor devices
- Enhanced electrical performance and reliability
- Reduced power consumption
- Simplified fabrication processes
- Cost-effectiveness in manufacturing
Original Abstract Submitted
A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.
