17982761. METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING MOIRÉ PATTERNS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING MOIRÉ PATTERNS
Organization Name
Inventor(s)
Woohyeok Jeong of Hwaseong-si (KR)
Donghwan Kim of Pyeongtak-si (KR)
Seulgi Han of Seongnam-si (KR)
METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING MOIRÉ PATTERNS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17982761 titled 'METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING MOIRÉ PATTERNS
Simplified Explanation
The patent application describes a method for manufacturing a semiconductor device using exposure and development techniques. The method includes the following steps:
- Forming a first layer with multiple patterns, each pattern having a different pitch.
- Performing exposure and development to create a second layer at a different position from the first layer.
- Using a Moire pattern, determining if there is a pitch shift in some of the exposure patterns formed, and checking if it falls within a tolerance range.
- If the pitch shift is within the tolerance range, performing etching for the second layer.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics manufacturing industry
Problems solved by this technology:
- Ensures accurate alignment and pitch control during the manufacturing process
- Reduces defects and errors in the semiconductor device
Benefits of this technology:
- Improved precision and accuracy in manufacturing semiconductor devices
- Cost-effective production process
- Reduced waste and increased yield in manufacturing
Original Abstract Submitted
A method for manufacturing a semiconductor device may include: forming a first layer comprising a plurality of patterns, each pattern having a different respective pitch; performing exposure and development to form a second layer at a layer different from the first layer; determining whether a pitch shift of a part of exposure patterns formed is within a tolerance range, using a Moire pattern; and performing etching for the second layer when the pitch shift of the part of exposure patterns is determined to be within the tolerance range. Performing the exposure and the development may include forming a first exposure pattern corresponding to a key pattern having a first pitch, forming a second exposure pattern corresponding to a cell pattern having a second pitch, and forming a third exposure pattern corresponding to a middle pitch pattern having a third pitch between the first pitch and the second pitch.
