17977575. MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byounghak Hong of Albany NY (US)
Seungchan Yun of Waterford NY (US)
Kang-ill Seo of Albany NY (US)
MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17977575 titled 'MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a multi-stack nanosheet structure that includes at least a first nanosheet structure and a second nanosheet structure, separated from each other. The structure also includes a channel structure with three portions - one on the first nanosheet structure, one on the second nanosheet structure, and one on the substrate between them. A gate structure is present between the first and second portions of the channel structure, and it includes a gate dielectric layer made of oxide. Additionally, there are source/drain regions on both the first and second nanosheet structures, which can be doped with either n-type or p-type dopants.
- The structure consists of multiple nanosheet layers stacked on top of each other.
- The nanosheet layers are separated from each other and adjacent to each other.
- The structure includes a continuous channel structure with three portions - one on each nanosheet layer and one on the substrate between them.
- A gate structure is present on the substrate between the nanosheet layers.
- The gate structure includes a gate dielectric layer made of oxide.
- Source/drain regions are present on each nanosheet layer.
- The source/drain regions can be doped with either n-type or p-type dopants.
Potential applications of this technology:
- This multi-stack nanosheet structure can be used in the fabrication of advanced transistors for electronic devices.
- It can enable the development of more efficient and compact integrated circuits.
- The structure may find applications in the semiconductor industry for improving the performance of electronic devices.
Problems solved by this technology:
- The multi-stack nanosheet structure addresses the need for higher performance and energy-efficient transistors.
- It helps overcome the limitations of traditional transistor designs by providing better control over the flow of current.
Benefits of this technology:
- Improved performance: The structure allows for better control of current flow, leading to enhanced transistor performance.
- Energy efficiency: The design enables lower power consumption, contributing to energy-efficient electronic devices.
- Compact size: The multi-stack nanosheet structure allows for a more compact and dense integration of transistors, enabling smaller and more portable electronic devices.
Original Abstract Submitted
Provided is a multi-stack nanosheet structure that includes: at least a first nanosheet structure and at least a second nanosheet structure, above the substrate, separated from each other, wherein the first nanosheet structure and second nanosheet structure are adjacent to each other; a channel structure comprising a first portion on the first nanosheet structure, a second portion on the second nanosheet structure, and a third portion on the substrate between the first and second portions, wherein the first portion, the second portion and the third portion form a single continuous structure; a gate structure between the first and second portions on the third portion of the channel structure, wherein the gate structure comprises a gate dielectric layer comprising oxide; and at least a first source/drain region on the first nanosheet structure, and at least a second source/drain region on the second nanosheet structure, wherein the first source/drain region and the second source/drain region include an n-type or p-type dopant.
