17977013. EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Junga Lee of Suwon-si (KR)

Yeonsook Kim of Hwaseong-si (KR)

Wooseung Jung of Busan (KR)

EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17977013 titled 'EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME

Simplified Explanation

The abstract describes an epitaxial wafer and a semiconductor memory device. Here is a simplified explanation of the abstract:

• The epitaxial wafer consists of a semiconductor substrate with a front surface and a rear surface.
• A strain relaxed buffer (SRB) layer covers the entire front surface of the semiconductor substrate.
• A multi-stack is present on the surface of the SRB layer, also covering it entirely.
• The SRB layer includes a silicon germanium (SiGe) epitaxial layer with a concentration of germanium (Ge) ranging from 2.5% to 18%.
• The multi-stack has a superlattice structure, alternating between multiple silicon (Si) layers and multiple SiGe layers.

Potential applications of this technology:

• Semiconductor memory devices
• Integrated circuits
• Microprocessors
• Data storage devices

Problems solved by this technology:

• Strain relaxation: The strain relaxed buffer (SRB) layer helps to reduce strain between different layers, improving the overall performance and reliability of the device.
• Compatibility: The use of silicon germanium (SiGe) in the SRB layer allows for better compatibility with other semiconductor materials, enabling the integration of different components.
• Performance enhancement: The superlattice structure of the multi-stack helps to optimize the electrical properties of the device, leading to improved performance and efficiency.

Benefits of this technology:

• Improved performance: The epitaxial wafer and multi-stack structure enhance the performance of semiconductor devices, leading to faster and more efficient operation.
• Compatibility: The use of SiGe in the SRB layer improves compatibility with other materials, enabling the integration of different components and technologies.
• Reliability: The strain relaxation provided by the SRB layer helps to reduce the risk of material defects and improves the overall reliability of the device.

Original Abstract Submitted

An epitaxial wafer and a semiconductor memory device, the epitaxial wafer including a semiconductor substrate having a front surface and a rear surface opposite to each other; a strain relaxed buffer (SRB) layer on and entirely covering the front surface of the semiconductor substrate; and a multi-stack on and entirely covering a surface of the SRB layer, wherein the SRB layer includes a silicon germanium (SiGe) epitaxial layer including germanium (Ge) at a first concentration of about 2.5 at % to about 18 at %, and the multi-stack has a superlattice structure in which a plurality of silicon (Si) layers and a plurality of SiGe layers are alternately provided.