17976955. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
MIN TAE Ryu of Hwaseong-si (KR)
SUNGWON Yoo of Hwaseong-si (KR)
KISEOK Lee of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17976955 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The patent application describes a semiconductor memory device that includes several components such as bit lines, a hydrogen supply insulating layer, source patterns, a hydrogen diffusion barrier layer, a channel pattern, a word line, and a landing pad.
- The bit lines are parallel lines on a substrate.
- The hydrogen supply insulating layer fills the space between the bit lines and contains hydrogen.
- Source patterns are located on each bit line and partially contact the hydrogen supply insulating layer.
- A hydrogen diffusion barrier layer covers the top surface of the hydrogen supply insulating layer and contacts the side surface of the source pattern.
- A first channel pattern is located on the source pattern.
- A first word line is adjacent to the side surface of the first channel pattern and crosses over the bit lines.
- A landing pad is present on the first channel pattern.
Potential applications of this technology:
- Semiconductor memory devices in various electronic devices such as computers, smartphones, and tablets.
- Memory modules used in data storage systems and servers.
- Embedded memory in microcontrollers and other integrated circuits.
Problems solved by this technology:
- The hydrogen supply insulating layer helps in improving the performance and reliability of the memory device.
- The hydrogen diffusion barrier layer prevents the unwanted diffusion of hydrogen, ensuring stable operation.
- The arrangement of components allows for efficient data storage and retrieval.
Benefits of this technology:
- Enhanced performance and reliability of the semiconductor memory device.
- Improved data storage capacity and speed.
- More efficient use of space on the substrate.
- Better control over the diffusion of hydrogen, leading to stable operation.
Original Abstract Submitted
A semiconductor memory device includes bit lines disposed on a substrate and extending in a first direction in parallel to each other, a hydrogen supply insulating layer including hydrogen and filling a space between the bit lines, a source pattern located on each of the bit lines and being in partial contact with the hydrogen supply insulating layer, a hydrogen diffusion barrier layer covering a top surface of the hydrogen supply insulating layer and being in contact with a side surface of the source pattern, a first channel pattern located on the source pattern, a first word line being adjacent to a side surface of the first channel pattern and crossing over the bit lines, and a landing pad on the first channel pattern.
