17975054. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Young Chul Shin of Hwaseong-si (KR)
Su Min Kim of Hwaseong-si (KR)
Il Young Han of Uiwang-si (KR)
Nung Pyo Hong of Goyang-si (KR)
Seung Don Lee of Seongnam-si (KR)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17975054 titled 'METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method for manufacturing a semiconductor device using a specific apparatus and laser technology.
- The method involves using a chamber, support structure, and a bonding structure consisting of two substrate structures and a bonding metal layer.
- A laser device is used to irradiate a laser beam onto the bonding structure.
- The purpose of this method is to manufacture a semiconductor device using the specific apparatus and laser technology.
Potential Applications
This technology can be applied in various industries and fields, including:
- Electronics manufacturing
- Semiconductor industry
- Research and development of advanced electronic devices
Problems Solved
The method described in the patent application addresses the following problems:
- Efficient manufacturing of semiconductor devices
- Ensuring proper bonding between substrate structures
- Enhancing the overall quality and performance of the semiconductor device
Benefits
The use of this method and apparatus offers several benefits:
- Improved precision and accuracy in manufacturing semiconductor devices
- Enhanced bonding strength between substrate structures
- Increased efficiency and productivity in the manufacturing process
- Potential for cost savings in the production of semiconductor devices.
Original Abstract Submitted
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device which uses an apparatus for manufacturing the semiconductor device including: a chamber, a support structure provided inside the chamber, and configured to support a bonding structure that comprises a first substrate structure, a second substrate structure, and a bonding metal layer provided between the first substrate structure and the second substrate structure, and a laser device which is provided above the chamber, the semiconductor device manufacturing method comprising: irradiating a laser beam to the bonding structure using the laser device.
