17972626. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
TAKASHI Ishida of Nisshin-city (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17972626 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
Abstract Explanation
The patent application describes a method for manufacturing a semiconductor device using laser light. The method involves irradiating a semiconductor substrate that has two layers, a p-type first semiconductor layer and an n-type second semiconductor layer. The laser light is focused on the interface between these two layers. The semiconductor substrate is then separated into the first and second semiconductor layers along this interface. Both the p-type and n-type layers are made of compound semiconductors.
Bullet Points
- Method for manufacturing a semiconductor device using laser light
- Semiconductor substrate with p-type and n-type layers
- Laser light is focused on the interface between the two layers
- Substrate is separated into the two layers along this interface
- Both layers are made of compound semiconductors
Potential Applications
- Manufacturing of various semiconductor devices
- Production of high-performance electronic components
- Development of advanced sensors and detectors
- Creation of efficient solar cells and photovoltaic devices
Problems Solved
- Enables precise separation of semiconductor layers
- Facilitates the manufacturing process of compound semiconductor devices
- Provides a method for creating high-quality interfaces between different semiconductor layers
- Allows for the production of complex semiconductor structures with improved performance
Benefits
- Enhanced efficiency and performance of semiconductor devices
- Improved reliability and durability of electronic components
- Increased flexibility in designing and fabricating semiconductor structures
- Potential for cost reduction in semiconductor manufacturing processes
Original Abstract Submitted
A method for manufacturing a semiconductor device includes: irradiating, with laser light, a semiconductor substrate having a p-type first semiconductor layer and an n-type second semiconductor layer so that the laser light converges on an interface between the first semiconductor layer and the second semiconductor layer, wherein each of the p-type first semiconductor layer and the n-type second semiconductor layer placed on the first semiconductor layer is formed of a compound semiconductor; and separating the semiconductor substrate into the first semiconductor layer and the second semiconductor layer along the interface.
