17970242. RF GENERATING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
RF GENERATING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
Younghwan Choi of Suwon-si (KR)
Chunyoon Park of Suwon-si (KR)
Hyungjung Yong of Suwon-si (KR)
RF GENERATING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17970242 titled 'RF GENERATING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME
Simplified Explanation
The abstract describes a radio frequency (RF) generating device that generates RF output signals. Here are the key points:
- The device includes a controller that generates an RF control signal and a gain control signal.
- It has multiple RF signal generators, each generating an RF signal with a frequency or phase determined by the RF control signal.
- There are also multiple RF amplification modules, which receive the RF signals and generate RF amplification signals by controlling the gain based on the gain control signal.
- An RF switch module selects one or more of the RF amplification signals and generates an RF output signal in the form of a multi-level pulse.
- An impedance converter is connected to an electrode of an external load and converts the load impedance into a target impedance within a target range.
Potential applications of this technology:
- Wireless communication systems
- Radar systems
- Satellite communication systems
- Radio frequency identification (RFID) systems
Problems solved by this technology:
- Efficient generation of RF output signals with controlled frequency and phase
- Controlling the gain of RF signals to optimize amplification
- Selecting and combining multiple RF amplification signals for desired output
- Converting load impedance to a target impedance for optimal performance
Benefits of this technology:
- Improved signal generation and amplification accuracy
- Enhanced control over RF output signals
- Increased efficiency and performance of RF systems
- Simplified impedance matching for external loads.
Original Abstract Submitted
A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.
