View source for 17969343. IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT simplified abstract (Samsung Electronics Co., Ltd.)

=IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:HYUNPIL Noh of SEONGNAM-SI (KR)|HYUNPIL Noh of SEONGNAM-SI (KR)]][[Category:HYUNPIL Noh of SEONGNAM-SI (KR)]]

==IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17969343 titled 'IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT

==Simplified Explanation==

The abstract describes an image sensor that includes various components such as a semiconductor substrate, a buried gate structure, a floating diffusion region, a contact, and a contact barrier region.

* The image sensor is built on a semiconductor substrate with two surfaces.
* The substrate has a photoelectric conversion region for capturing light and converting it into electrical signals.
* A buried gate structure is placed in a trench within the substrate, extending from the first surface.
* On one side of the buried gate structure, there is a floating diffusion region that contains a specific type of impurity.
* A contact is positioned on the first surface of the substrate, directly above the floating diffusion region.
* Between the contact and the floating diffusion region, there is a contact barrier region that contains a different type of impurity.

Potential applications of this technology:

* Digital cameras and smartphones: The image sensor can be used in digital cameras and smartphones to capture high-quality images.
* Surveillance systems: The image sensor can be utilized in surveillance cameras for monitoring and recording activities.
* Medical imaging: The image sensor can be employed in medical devices for capturing detailed images of internal body parts.

Problems solved by this technology:

* Improved image quality: The image sensor's design and components help in capturing clearer and more detailed images.
* Reduction of noise: The contact barrier region helps in minimizing noise interference, resulting in cleaner image signals.

Benefits of this technology:

* Enhanced sensitivity: The photoelectric conversion region and the floating diffusion region contribute to increased sensitivity to light, allowing for better image capture in low-light conditions.
* Lower noise levels: The contact barrier region helps in reducing noise interference, resulting in higher signal-to-noise ratio and improved image quality.
* Compact design: The integration of various components within the semiconductor substrate allows for a compact and efficient image sensor.


==Original Abstract Submitted==

An image sensor may include; a semiconductor substrate including a first surface and a second surface, and further including a photoelectric conversion region, a buried gate structure disposed in a buried gate trench extending into the semiconductor substrate from the first surface of the semiconductor substrate, a floating diffusion region including a first type impurity and disposed on one side of the buried gate structure in the semiconductor substrate, a contact disposed on the first surface of the semiconductor substrate above the floating diffusion region, and a contact barrier region including a second type impurity and disposed between the contact and the floating diffusion region in the semiconductor substrate.



[[Category:H01L27/146]]