17969343. IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT simplified abstract (Samsung Electronics Co., Ltd.)
Contents
IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT
Organization Name
Inventor(s)
HYUNPIL Noh of SEONGNAM-SI (KR)
IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 17969343 titled 'IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT
Simplified Explanation
The abstract describes an image sensor that includes various components such as a semiconductor substrate, a buried gate structure, a floating diffusion region, a contact, and a contact barrier region.
- The image sensor is built on a semiconductor substrate with two surfaces.
- The substrate has a photoelectric conversion region for capturing light and converting it into electrical signals.
- A buried gate structure is placed in a trench within the substrate, extending from the first surface.
- On one side of the buried gate structure, there is a floating diffusion region that contains a specific type of impurity.
- A contact is positioned on the first surface of the substrate, directly above the floating diffusion region.
- Between the contact and the floating diffusion region, there is a contact barrier region that contains a different type of impurity.
Potential applications of this technology:
- Digital cameras and smartphones: The image sensor can be used in digital cameras and smartphones to capture high-quality images.
- Surveillance systems: The image sensor can be utilized in surveillance cameras for monitoring and recording activities.
- Medical imaging: The image sensor can be employed in medical devices for capturing detailed images of internal body parts.
Problems solved by this technology:
- Improved image quality: The image sensor's design and components help in capturing clearer and more detailed images.
- Reduction of noise: The contact barrier region helps in minimizing noise interference, resulting in cleaner image signals.
Benefits of this technology:
- Enhanced sensitivity: The photoelectric conversion region and the floating diffusion region contribute to increased sensitivity to light, allowing for better image capture in low-light conditions.
- Lower noise levels: The contact barrier region helps in reducing noise interference, resulting in higher signal-to-noise ratio and improved image quality.
- Compact design: The integration of various components within the semiconductor substrate allows for a compact and efficient image sensor.
Original Abstract Submitted
An image sensor may include; a semiconductor substrate including a first surface and a second surface, and further including a photoelectric conversion region, a buried gate structure disposed in a buried gate trench extending into the semiconductor substrate from the first surface of the semiconductor substrate, a floating diffusion region including a first type impurity and disposed on one side of the buried gate structure in the semiconductor substrate, a contact disposed on the first surface of the semiconductor substrate above the floating diffusion region, and a contact barrier region including a second type impurity and disposed between the contact and the floating diffusion region in the semiconductor substrate.
