17968873. NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Young Geun Jeon of Hwaseong-si (KR)

Hyung Suk Yu of Seoul (KR)

Jae Yong Jeong of Yongin-si (KR)

Byung Yong Choi of Seongnam-si (KR)

NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17968873 titled 'NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF

Simplified Explanation

The abstract describes a non-volatile memory device that includes a memory cell array, pass transistors, a voltage generator, and switch circuits.

• The memory cell array consists of multiple memory cells connected to word lines.
• The first pass transistors are connected to one side of the word lines, while the second pass transistors are connected to the other side.
• A voltage generator generates operating voltages and applies them to the memory cell array.
• The first switch circuit connects the first pass transistors to the voltage generator in response to a switch control signal.
• The second switch circuit connects the second pass transistors to the voltage generator in response to the same switch control signal.

Potential applications of this technology:

• Non-volatile memory devices used in various electronic devices such as computers, smartphones, and IoT devices.
• Storage devices that require high-speed read and write operations.

Problems solved by this technology:

• Non-volatile memory devices often face challenges in achieving high-speed read and write operations.
• The design and control of pass transistors and voltage generation can impact the performance and reliability of the memory device.

Benefits of this technology:

• Improved performance and reliability of non-volatile memory devices.
• Efficient utilization of operating voltages for the memory cell array.
• Simplified control circuitry for connecting pass transistors to the voltage generator.

Original Abstract Submitted

A non-volatile memory device includes a memory cell array including a plurality of memory cells respectively connected to a plurality of word lines; a plurality of first pass transistors each connected to one side of one of the plurality of word lines; a plurality of second pass transistors each connected to the other side of one of the plurality of word lines; a voltage generator configured to generate a plurality of operating voltages and to apply the plurality of operating voltages to the memory cell array; in response to a first switch control signal, a first switch circuit configured to connect the plurality of first pass transistors to the voltage generator; and in response to a first switch control signal, a second switch circuit configured to connect the plurality of second pass transistors to the voltage generator.