17968058. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Joonsung Lim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17968058 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with a stack structure consisting of a gate stack region and a dummy stack region. The gate stack region includes alternating layers of interlayer insulating layers and gate electrodes, while the dummy stack region includes alternating layers of dummy insulating layers and dummy horizontal layers. A separation structure and a vertical memory structure are present in the stack structure. Additionally, there are gate contact structures that connect to the gate electrodes.
- The semiconductor device has a stack structure with a gate stack region and a dummy stack region.
- The gate stack region consists of interlayer insulating layers and gate electrodes stacked alternately.
- The dummy stack region consists of dummy insulating layers and dummy horizontal layers stacked alternately.
- A separation structure and a vertical memory structure are integrated into the stack structure.
- Gate contact structures are present to electrically connect to the gate electrodes.
- The gate electrodes include a first and second gate electrode, with the second gate electrode positioned higher than the first gate electrode.
- Each gate contact structure includes a gate contact plug and a first insulating spacer.
- The gate contact plugs consist of a first gate contact plug that penetrates the second gate electrode and contacts the first gate electrode, and a second gate contact plug that contacts the second gate electrode.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in memory modules, processors, and other integrated circuits.
Problems Solved
- The stack structure with alternating gate stack and dummy stack regions allows for improved performance and functionality of the semiconductor device.
- The gate contact structures provide efficient electrical connections to the gate electrodes.
- The vertical memory structure enhances the memory capabilities of the device.
Benefits
- The stack structure design optimizes the use of space and improves the overall efficiency of the semiconductor device.
- The gate contact structures ensure reliable and effective electrical connections.
- The vertical memory structure increases the memory capacity and performance of the device.
Original Abstract Submitted
A semiconductor device includes a stack structure including a gate stack region and dummy stack region. The gate stack region includes interlayer insulating layers and gate electrodes alternately stacked. The dummy stack region includes dummy insulating layers and dummy horizontal layers alternately stacked. A separation structure penetrates the stack structure. A vertical memory structure penetrates the gate stack region in a first region. A plurality of gate contact structures electrically connect to the gate electrodes in a second region. The gate electrodes include a first gate electrode and a second gate electrode disposed on a level higher than the first gate electrode. Each of the gate contact structures includes a gate contact plug and a first insulating spacer. The gate contact plugs include a first gate contact plug penetrating the second gate electrode and contacting the first gate electrode, and a second gate contact plug contacting the second gate electrode.
