17967200. TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL simplified abstract (Samsung Electronics Co., Ltd.)
TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL
Organization Name
Inventor(s)
Hyeonjin Shin of Suwon-si (KR)
TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 17967200 titled 'TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL
Simplified Explanation
The abstract describes a patent application for a transistor with a two-dimensional (2D) channel. The transistor includes three electrodes and a channel layer that is parallel to one of the electrodes. The channel layer contains at least one 2D channel with different doping concentrations in different regions. There are also two doping layers under the channel layer corresponding to the first and second electrodes.
- The patent application is for a transistor with a 2D channel.
- The transistor has three electrodes and a channel layer parallel to one of the electrodes.
- The channel layer contains at least one 2D channel with different doping concentrations in different regions.
- There are two doping layers under the channel layer corresponding to the first and second electrodes.
- The first and second doping layers make contact with the 2D channel layer.
Potential Applications
- This technology can be used in the development of more efficient and compact electronic devices.
- It can be applied in the manufacturing of high-performance transistors for various applications such as smartphones, computers, and other electronic devices.
Problems Solved
- The transistor with a 2D channel addresses the need for improved performance and miniaturization of electronic devices.
- It solves the problem of limited space in electronic devices by providing a more compact transistor design.
Benefits
- The use of a 2D channel in the transistor can result in improved electrical performance and efficiency.
- The different doping concentrations in the 2D channel allow for better control of the transistor's behavior.
- The compact design of the transistor allows for more efficient use of space in electronic devices.
Original Abstract Submitted
A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.
