17966864. SEMICONDUCTOR DEVICE HAVING VIA PROTECTIVE LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE HAVING VIA PROTECTIVE LAYER
Organization Name
Inventor(s)
Jumyong Park of Cheonan-si (KR)
SEMICONDUCTOR DEVICE HAVING VIA PROTECTIVE LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17966864 titled 'SEMICONDUCTOR DEVICE HAVING VIA PROTECTIVE LAYER
Simplified Explanation
The patent application describes a semiconductor device that includes several layers and structures to improve its performance and protect its components.
- The device has a via passivation layer on the inactive surface of a substrate, which helps to insulate and protect the substrate.
- A through-electrode vertically penetrates both the substrate and the via passivation layer, allowing for electrical connections.
- A concave portion is formed in the top surface of the via passivation layer, next to the through-electrode.
- A via protective layer is added to fill the concave portion, creating a smooth and protective surface.
- The via protective layer has a band shape that surrounds the through-electrode in a horizontal cross-sectional view.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Improved insulation and protection of the substrate
- Enhanced electrical connections
- Prevention of damage to the through-electrode and surrounding components
Benefits of this technology:
- Increased reliability and durability of the semiconductor device
- Improved performance and functionality
- Enhanced manufacturing efficiency and yield
Original Abstract Submitted
A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.
