17966034. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17966034 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a semiconductor device that consists of two wafers bonded together with a contact plug. The first wafer has a dielectric layer with a connection pad, while the second wafer also has a dielectric layer with a connection pad. The contact plug, made of a conductive material, is filled in a vertical through hole and serves to electrically connect the two connection pads.
- The semiconductor device includes two wafers bonded together with a contact plug.
- The first wafer has a dielectric layer with a connection pad, and the second wafer also has a dielectric layer with a connection pad.
- The contact plug is made of a conductive material and is filled in a vertical through hole.
- The through hole is formed through etching and passes through the first wafer and partially through the second wafer to reach the upper surface and/or sidewall of the second connection pad.
Potential Applications
- Integrated circuits
- Microprocessors
- Memory devices
- Power devices
Problems Solved
- Provides a reliable and efficient method for electrically connecting two wafers in a semiconductor device.
- Enables the integration of multiple components in a compact and space-saving manner.
- Improves the overall performance and functionality of semiconductor devices.
Benefits
- Enhanced electrical connectivity between wafers.
- Increased integration density and miniaturization of semiconductor devices.
- Improved reliability and performance of the device.
- Cost-effective manufacturing process.
Original Abstract Submitted
The technology of this application relates to a semiconductor device that may include a first wafer, a second wafer, and a contact plug. The first wafer may include a first dielectric layer, and the first dielectric layer has a first connection pad. The second wafer is bonded to the first wafer, the second wafer includes a second dielectric layer, and the second dielectric layer has a second connection pad. The contact plug is made of a conductive material filled in a vertical through hole, and is configured to electrically connect the first connection pad and the second connection pad. The vertical through hole is a through hole that is formed through etching and that passes through the first wafer and partially passes through the second wafer to an upper surface and/or a sidewall of the second connection pad.
