17965091. MEMORY SYSTEM FOR PERFORMING RECOVERY OPERATION, MEMORY DEVICE, AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 MEMORY SYSTEM FOR PERFORMING RECOVERY OPERATION, MEMORY DEVICE, AND METHOD OF OPERATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY SYSTEM FOR PERFORMING RECOVERY OPERATION, MEMORY DEVICE, AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
MEMORY SYSTEM FOR PERFORMING RECOVERY OPERATION, MEMORY DEVICE, AND METHOD OF OPERATING THE SAME
Organization Name
Inventor(s)
Younggul Song of Suwon-sl (KR)
Byungchul Jang of Suwon-si (KR)
Junyeong Seok of Suwon-si (KR)
MEMORY SYSTEM FOR PERFORMING RECOVERY OPERATION, MEMORY DEVICE, AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17965091 titled 'MEMORY SYSTEM FOR PERFORMING RECOVERY OPERATION, MEMORY DEVICE, AND METHOD OF OPERATING THE SAME
Simplified Explanation
The abstract describes a method for operating a memory system that includes a memory device and a memory controller. The method involves detecting a memory block with a high degradation count, transmitting a command to the memory device, and applying specific voltages to word lines and bit lines connected to the memory block.
- The method involves detecting memory blocks with degradation counts above a certain threshold.
- A command is sent to the memory device to perform specific operations on the memory block.
- Higher voltages are applied to word lines and bit lines connected to the memory block during these operations.
- The higher voltages ensure proper functioning of memory cells during program, read, or erase operations.
Potential Applications
This technology can be applied in various memory systems, such as flash memory, solid-state drives (SSDs), and other non-volatile memory devices.
Problems Solved
1. Memory degradation: The method helps identify memory blocks that have degraded over time, allowing for appropriate actions to be taken to maintain the overall performance and reliability of the memory system. 2. Memory cell functionality: By applying higher voltages during program, read, or erase operations, the method ensures that memory cells connected to the word lines and bit lines function properly, reducing the risk of errors or data loss.
Benefits
1. Enhanced memory system performance: By detecting and addressing degraded memory blocks, the method helps maintain the overall performance and efficiency of the memory system. 2. Improved reliability: Applying higher voltages to word lines and bit lines during specific operations ensures the proper functioning of memory cells, reducing the likelihood of errors or data corruption. 3. Extended lifespan: By identifying and managing degraded memory blocks, the method can help prolong the lifespan of the memory system, reducing the need for frequent replacements or repairs.
Original Abstract Submitted
A method of operating a memory system that comprises a memory device including a plurality of memory blocks and a memory controller, includes detecting a first memory block having a degradation count greater than or equal to a first reference value by the memory controller. A first command for the first memory block is transmitted to the memory device by the memory controller. A first voltage is applied to all of a plurality of word lines connected to the first memory block and a second voltage to a bit line connected to the first memory block in response to the first command by the memory device. The first voltage is greater than a voltage applied to turn on memory cells connected to all of the plurality of word lines. The second voltage is greater than a voltage applied to the bit line during program, read or erase operations.
