17964583. REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES simplified abstract (NVIDIA Corporation)
Contents
- 1 REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES
Organization Name
Inventor(s)
Shawn Xiao of Santa Clara CA (US)
Justin Jiang of Santa Clara CA (US)
Henry Li of Santa Clara CA (US)
Jerry Zhou of Santa Clara CA (US)
Joey Jiao of Santa Clara CA (US)
REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17964583 titled 'REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES
Simplified Explanation
The abstract describes a die for an integrated circuit package, with various regions including interconnect, transistor, and power regions. The die features metal lines, vias, electro-conductive film, and through-silicon vias (TSVs) for electrical connections and power distribution.
- Interconnect region with interconnect dielectric layers, metal lines, and vias
- Transistor region with transistors and electrical connections to power rails
- Power region with electro-conductive film and TSVs for power distribution
Potential Applications
The technology described in the patent application could be applied in various electronic devices such as smartphones, tablets, laptops, and other computing devices requiring high-performance integrated circuits.
Problems Solved
This technology solves the problem of efficient power distribution and electrical connections within integrated circuit packages, improving overall performance and reliability of electronic devices.
Benefits
The benefits of this technology include enhanced power efficiency, improved signal transmission, and increased reliability of integrated circuits, leading to better performance and longevity of electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the semiconductor industry for manufacturing advanced integrated circuit packages for consumer electronics, telecommunications equipment, and other high-tech devices.
Possible Prior Art
One possible prior art for this technology could be the use of TSVs in integrated circuit packages for power distribution and signal transmission. Additionally, the integration of metal lines and vias for interconnectivity may have been previously explored in semiconductor manufacturing processes.
Unanswered Questions
How does this technology compare to existing power distribution methods in integrated circuit packages?
This article does not provide a direct comparison to existing power distribution methods in integrated circuit packages. It would be interesting to know how this technology improves upon or differs from traditional power distribution techniques.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing. Understanding the obstacles and limitations of scaling up this technology could provide valuable insights into its practicality and feasibility.
Original Abstract Submitted
A die including a die body having a first body surface, a second body surface on an opposite side of the die body as the first body surface, an interconnect region adjacent to the first body surface including interconnect dielectric layers with metal lines and vias, a transistor region above the interconnect region, the metal lines and vias making electrical connections to one or more power rails of the transistor region and electrically connected to transistors of the transistor region, a power region above the transistor region including an electro-conductive film on the second body surface and TSVs in the power region, an outer end of the TSV contacting the film and an embedded end of the TSVs contacting one of the power rails. A method of manufacturing an IC package and computer with the IC package are also disclosed.
