17963062. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Youngbum Woo of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17963062 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device that includes multiple circuit devices and interconnection structures. It also includes gate electrodes and channel structures that penetrate the gate electrodes.
- The semiconductor device includes a first substrate and circuit devices on it.
- A first interconnection structure is electrically connected to the circuit devices.
- A second substrate is placed on top of the first interconnection structure.
- Gate electrodes are stacked on the second substrate in a perpendicular direction.
- Channel structures, including a channel layer, extend perpendicularly to the second substrate.
- A ground interconnection structure connects the first and second substrates.
- An upper via integrated with the second substrate extends from the lower surface of the second substrate towards the first substrate.
Potential applications of this technology:
- Integrated circuits
- Microprocessors
- Memory devices
- Power electronics
Problems solved by this technology:
- Improved electrical connectivity between circuit devices and interconnection structures.
- Enhanced performance and functionality of semiconductor devices.
- Efficient heat dissipation and thermal management.
Benefits of this technology:
- Higher integration density and miniaturization of semiconductor devices.
- Improved electrical performance and reliability.
- Enhanced thermal management capabilities.
- Potential for cost reduction in manufacturing processes.
Original Abstract Submitted
A semiconductor device includes a first substrate, circuit devices disposed on the first substrate, a first interconnection structure electrically connected to the circuit devices, a second substrate disposed on an upper portion of the first interconnection structure, gate electrodes spaced apart from each other and stacked on the second substrate in a direction perpendicular to an upper surface of the second substrate, and channel structures penetrating the gate electrodes, extending perpendicularly to the second substrate, and including a channel layer. The semiconductor device also includes a ground interconnection structure connecting the first substrate and the second substrate, and including an upper via integrated with the second substrate and extending from a lower surface of the second substrate towards the first substrate.
