17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
Contents
- 1 EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE
Organization Name
Inventor(s)
Dan S. Lavric of Beaverton OR (US)
YenTing Chiu of Portland OR (US)
Tahir Ghani of Portland OR (US)
Leonard P. Guler of Hillsboro OR (US)
Mohammad Hasan of Aloha OR (US)
Aryan Navabi-shirazi of Portland OR (US)
Anand S. Murthy of Portland OR (US)
Wonil Chung of Hillsboro OR (US)
Allen B. Gardiner of Portland OR (US)
EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17958293 titled 'EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE
Simplified Explanation
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for integrated circuit structures that include self-aligned metal gates, self-aligned epitaxial structure, self-aligned terminal contacts over the epitaxial structure, and removal of poly material around a gate during integrated circuit structure manufacture, using a tub gate architecture. Other embodiments may be described and/or claimed.
- Self-aligned metal gates in integrated circuit structures
- Self-aligned epitaxial structure in integrated circuit manufacturing
- Self-aligned terminal contacts over epitaxial structures
- Removal of poly material around gates using tub gate architecture
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
The innovation presented in this patent application addresses the following issues:
- Improving the precision and efficiency of integrated circuit manufacturing processes
- Enhancing the performance and reliability of integrated circuit structures
- Streamlining the fabrication of complex semiconductor devices
Benefits
By implementing the techniques described in this patent application, the following benefits can be achieved:
- Higher quality integrated circuit structures
- Increased productivity in semiconductor manufacturing
- Cost-effective production of advanced electronic components
Potential Commercial Applications
A potential commercial application of this technology could be in:
- Semiconductor fabrication facilities
- Electronics companies
- Research institutions
Possible Prior Art
One possible prior art in this field could be the use of self-aligned processes in semiconductor manufacturing, such as self-aligned silicide formation or self-aligned contact structures.
Unanswered Questions
How does this technology compare to existing methods in terms of cost-effectiveness?
The cost-effectiveness of implementing this technology compared to traditional methods is not explicitly addressed in the patent application. Further analysis and comparison would be needed to determine the economic advantages of this innovation.
What impact does this technology have on the overall performance of integrated circuits?
While the patent application mentions improvements in performance and reliability, specific data on the impact of this technology on the overall performance of integrated circuits is not provided. Conducting performance tests and evaluations would be necessary to assess the full extent of the benefits.
Original Abstract Submitted
Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for integrated circuit structures that include self-aligned metal gates, self-aligned epitaxial structure, self-aligned terminal contacts over the epitaxial structure, and removal of poly material around a gate during integrated circuit structure manufacture, using a tub gate architecture. Other embodiments may be described and/or claimed.
- Intel Corporation
- Dan S. Lavric of Beaverton OR (US)
- YenTing Chiu of Portland OR (US)
- Tahir Ghani of Portland OR (US)
- Leonard P. Guler of Hillsboro OR (US)
- Mohammad Hasan of Aloha OR (US)
- Aryan Navabi-shirazi of Portland OR (US)
- Anand S. Murthy of Portland OR (US)
- Wonil Chung of Hillsboro OR (US)
- Allen B. Gardiner of Portland OR (US)
- H01L27/092
- H01L21/02
- H01L21/8238
- H01L29/06
- H01L29/423
- H01L29/49
- H01L29/66
- H01L29/775