17957721. INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS simplified abstract (Intel Corporation)
Contents
- 1 INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS
Organization Name
Inventor(s)
Philip Yashar of Portland OR (US)
Gokul Malyavanatham of Hillsboro OR (US)
Hema Vijwani of Edmonds WA (US)
INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17957721 titled 'INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH NIOBIUM BARRIER MATERIALS
Simplified Explanation
The patent application describes integrated circuit interconnect structures with a niobium-based barrier material, where niobium is sputter deposited at the bottom of an interconnect via before depositing a copper-based fill material. Some layers of metallization have a tantalum-based barrier, while others have a niobium-based barrier.
- Niobium-based barrier material used in integrated circuit interconnect structures
- Sputter deposition of niobium at the bottom of an interconnect via
- Copper-based fill material deposited over the niobium barrier
- Metallization with layers having tantalum-based and niobium-based barriers
Potential Applications
The technology can be applied in the manufacturing of integrated circuits, specifically in the interconnect structures to improve performance and reliability.
Problems Solved
1. Improved barrier material for interconnect structures 2. Enhanced adhesion between layers in metallization
Benefits
1. Better performance and reliability of integrated circuits 2. Increased efficiency in manufacturing processes
Potential Commercial Applications
Optimizing integrated circuit manufacturing processes with improved barrier materials for interconnect structures.
Possible Prior Art
Prior art may include patents or publications related to barrier materials in integrated circuit interconnect structures, such as tantalum-based barriers.
Unanswered Questions
How does the niobium-based barrier material compare to other barrier materials in terms of performance and cost?
The article does not provide a direct comparison with other barrier materials, leaving the reader to speculate on the relative advantages and disadvantages.
Are there any limitations or drawbacks to using niobium-based barriers in integrated circuit interconnect structures?
The article does not address any potential limitations or drawbacks of using niobium-based barriers, leaving room for further investigation into any potential challenges associated with this technology.
Original Abstract Submitted
Integrated circuit interconnect structures including a niobium-based barrier material. In some embodiments, a layer of essentially niobium may be sputter deposited, for example to a thickness of less than 8 nm at a bottom of an interconnect via. A copper-based fill material may then be deposited over the niobium barrier material. Integrated circuit interconnect metallization may comprise some layers of metallization that have a tantalum-based barrier and other layers of metallization that have a niobium-based barrier.
