17956919. METHOD OF FORMING A PATTERN OF SEMICONDUCTOR DEVICE OF A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE BY USING AN EXTREME ULTRAVIOLET MASK simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 METHOD OF FORMING A PATTERN OF SEMICONDUCTOR DEVICE OF A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE BY USING AN EXTREME ULTRAVIOLET MASK
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FORMING A PATTERN OF SEMICONDUCTOR DEVICE OF A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE BY USING AN EXTREME ULTRAVIOLET MASK - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
METHOD OF FORMING A PATTERN OF SEMICONDUCTOR DEVICE OF A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE BY USING AN EXTREME ULTRAVIOLET MASK
Organization Name
Inventor(s)
Sangoh Park of Hwaseong-si (KR)
METHOD OF FORMING A PATTERN OF SEMICONDUCTOR DEVICE OF A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE BY USING AN EXTREME ULTRAVIOLET MASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 17956919 titled 'METHOD OF FORMING A PATTERN OF SEMICONDUCTOR DEVICE OF A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE BY USING AN EXTREME ULTRAVIOLET MASK
Simplified Explanation
The patent application describes a method of forming a pattern on a semiconductor device using extreme ultraviolet (EUV) light and an EUV mask. The process involves preparing a semiconductor substrate, applying a photoresist, irradiating EUV light onto the photoresist, forming a pattern, and etching the substrate using the pattern as a mask.
- The method involves using EUV light and an EUV mask to form patterns on a semiconductor device.
- The EUV mask includes main patterns in the cell region and lanes in the outer region.
- The first lane has a line-and-space pattern, while the second lane has a protruding pattern.
- The patterns formed on the semiconductor substrate are used as an etch mask for further processing.
Potential Applications
This technology can be applied in the manufacturing of semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
The method addresses the challenge of forming precise patterns on a semiconductor substrate using EUV lithography. It provides a solution for creating patterns in both the cell region and the outer region of the substrate.
Benefits
Using EUV lithography and the described method offers several benefits:
- Enables the formation of precise patterns on a semiconductor substrate.
- Allows for the creation of patterns in both the cell region and the outer region.
- Enhances the efficiency and accuracy of semiconductor device manufacturing.
Original Abstract Submitted
A method of forming a pattern of a semiconductor device includes: preparing a semiconductor substrate including a cell region and an outer region; applying a photoresist on the semiconductor substrate; irradiating extreme ultraviolet (EUV) light reflected from an EUV mask, onto the photoresist; forming a photoresist pattern in the cell region and the outer region; and etching the semiconductor substrate, using the photoresist pattern as an etch mask. The EUV mask includes: a plurality of main patterns in a first zone, of the EUV mask, corresponding to the cell region; and a first lane and a second lane in a second zone, of the EUV mask, corresponding to the outer region, wherein the first lane and the second lane surround the plurality of main patterns, wherein the first lane has a line-and-space pattern, and the second lane has a protruding pattern.
