17956281. SPUTTERING APPARATUS AND METHOD OF FABRICATING MAGNETIC MEMORY DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)

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SPUTTERING APPARATUS AND METHOD OF FABRICATING MAGNETIC MEMORY DEVICE USING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO.,LTD.

Inventor(s)

Joonmyoung Lee of Gwacheon-si (KR)

Whankyun Kim of Seoul (KR)

Eunsun Noh of Yongin-si (KR)

Jeong-heon Park of Hwaseong-si (KR)

Junho Jeong of Hwaseong-si (KR)

SPUTTERING APPARATUS AND METHOD OF FABRICATING MAGNETIC MEMORY DEVICE USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17956281 titled 'SPUTTERING APPARATUS AND METHOD OF FABRICATING MAGNETIC MEMORY DEVICE USING THE SAME

Simplified Explanation

The abstract describes a sputtering apparatus and method for fabricating a magnetic memory device. Here is a simplified explanation of the abstract:

  • The sputtering apparatus consists of a chamber, a gas supply, a plurality of sputter guns, a chuck, and a cooling unit.
  • The chamber is supplied with a first gas and a second inert gas, each with different evaporation points.
  • The sputter guns are located in the upper portion of the chamber and are used for sputtering deposition.
  • The chuck is located in the lower portion of the chamber and is designed to hold a substrate.
  • The cooling unit is connected to the lower portion of the chuck and is used to cool the chuck to a specific temperature range.
  • The cooling temperature is set to be lower than the evaporation point of the first gas and higher than the evaporation point of the second gas.
  • The method of fabricating a magnetic memory device involves using this sputtering apparatus to deposit materials onto the substrate.

Potential applications of this technology:

  • Fabrication of magnetic memory devices, such as magnetic random-access memory (MRAM) or magnetic hard drives.
  • Production of thin films for various electronic devices, including sensors, transistors, and integrated circuits.

Problems solved by this technology:

  • Controlling the evaporation points of different gases during the sputtering process.
  • Maintaining a specific temperature range for the substrate to optimize the deposition process.

Benefits of this technology:

  • Enables precise control of the sputtering process by using different gases with specific evaporation points.
  • Provides a cooling unit to maintain the substrate at an optimal temperature, improving the quality of the deposited materials.
  • Enhances the efficiency and reliability of fabricating magnetic memory devices and other electronic components.


Original Abstract Submitted

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

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