17955696. VERTICAL NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
VERTICAL NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Yonghoon Son of Yongin-si (KR)
Sukkang Sung of Seongnam-si (KR)
Sangdon Lee of Hwaseong-si (KR)
Euntaek Jung of Hwaseong-si (KR)
VERTICAL NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17955696 titled 'VERTICAL NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The abstract describes a vertical non-volatile memory device that includes a substrate, a contact gate stack structure, insulating layers, separation insulating layers, and a contact electrode.
- The device has a substrate and a contact gate stack structure consisting of multiple gate lines stacked vertically on the substrate.
- Insulating layers are present between the gate lines to provide electrical isolation.
- Separation insulating layers are in contact with the protruding ends of the gate lines on both sides of a contact hole.
- The contact hole extends vertically through the contact gate stack structure, allowing the gate lines to protrude from its inner wall.
- A contact electrode is present at the contact hole and is electrically connected to the uppermost gate line among the multiple gate lines.
Potential Applications
- Non-volatile memory devices can be used in various electronic devices such as smartphones, tablets, and computers.
- The vertical structure of this memory device can potentially offer higher storage density and improved performance compared to traditional memory technologies.
Problems Solved
- This technology addresses the need for non-volatile memory devices with higher storage density and improved performance.
- The vertical structure allows for more efficient use of space and potentially reduces the footprint of the memory device.
Benefits
- The vertical non-volatile memory device offers higher storage density, allowing for more data to be stored in a smaller space.
- Improved performance can be achieved due to the vertical structure and efficient use of space.
- The contact gate stack structure and separation insulating layers provide better electrical isolation and reliability.
Original Abstract Submitted
A vertical non-volatile memory device includes, a substrate, a contact gate stack structure including a plurality of gate lines stacked in a vertical direction on the substrate, the vertical direction being perpendicular to a surface of the substrate, a plurality of insulating layers between the gate lines, a plurality of separation insulating layers in contact with a protruding end of each of the plurality of gate lines, respectively, in a horizontal direction at both sides of a contact hole, wherein the contact hole extends in the vertical direction in the contact gate stack structure so that the protruding ends of the plurality of gate lines protrude from an inner wall of the contact hole, the horizontal direction being horizontal to the surface of the substrate, and a contact electrode at the contact hole and electrically connected to an uppermost gate line among the plurality of gate lines.
