17951910. PLASMA PROCESSING APPARATUS INCLUDING GAS DISTRIBUTION PLATE simplified abstract (Samsung Electronics Co., Ltd.)

PLASMA PROCESSING APPARATUS INCLUDING GAS DISTRIBUTION PLATE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Chan Hoon Park of Hwaseong-si (KR)

Jung Hwan Um of Hwaseong-si (KR)

Jin Young Park of Hwaseong-si (KR)

Ho Yong Park of Hwaseong-si (KR)

Jin Young Bang of Hwaseong-si (KR)

Jong Woo Sun of Hwaseong-si (KR)

Sang Jean Jeon of Hwaseong-si (KR)

Je Woo Han of Hwaseong-si (KR)

PLASMA PROCESSING APPARATUS INCLUDING GAS DISTRIBUTION PLATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17951910 titled 'PLASMA PROCESSING APPARATUS INCLUDING GAS DISTRIBUTION PLATE

Simplified Explanation

The abstract describes a plasma processing apparatus that includes a support for holding a substrate, a gas distribution plate (GDP) with multiple nozzles facing the support, a main splitter for supplying process gas, and an additional splitter for supplying acceleration or deceleration gas. The nozzles include central, outer, middle, first, and second nozzles.

• The apparatus is designed for plasma processing of substrates.
• The support holds the substrate in place during processing.
• The gas distribution plate (GDP) has multiple nozzles that face the substrate.
• The main splitter supplies process gas to the nozzles.
• The additional splitter supplies acceleration or deceleration gas to the nozzles.
• The nozzles include central, outer, middle, first, and second nozzles.
• The middle nozzles are configured to spray both process gas and acceleration gas.
• The first and second nozzles have specific functions in the plasma processing.

Potential Applications

• Semiconductor manufacturing
• Thin film deposition
• Surface modification of materials

Problems Solved

• Efficient and controlled plasma processing of substrates
• Uniform distribution of process gas and acceleration gas
• Enhanced control over plasma processing parameters

Benefits

• Improved quality and uniformity of processed substrates
• Increased productivity and throughput in plasma processing
• Enhanced control and flexibility in adjusting plasma processing parameters

Original Abstract Submitted

A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.