17951474. INTERCONNECT STRUCTURE INCLUDING GRAPHENE-METAL BARRIER AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
Contents
INTERCONNECT STRUCTURE INCLUDING GRAPHENE-METAL BARRIER AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Keunwook Shin of Suwon-si (KR)
Hyeonjin Shin of Suwon-si (KR)
INTERCONNECT STRUCTURE INCLUDING GRAPHENE-METAL BARRIER AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17951474 titled 'INTERCONNECT STRUCTURE INCLUDING GRAPHENE-METAL BARRIER AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
An interconnect structure is described in this patent application. It consists of a graphene-metal barrier on a substrate and a conductive layer on top of the barrier. The graphene-metal barrier is made up of multiple layers of graphene with metal particles located on the grain boundaries between these layers. The metal particles are present in a ratio of 1 atom % to 10 atom % with respect to the carbon in the graphene layers.
- The interconnect structure includes a graphene-metal barrier and a conductive layer.
- The graphene-metal barrier is composed of multiple layers of graphene.
- Metal particles are situated on the grain boundaries between the graphene layers.
- The metal particles are present in a ratio of 1 atom % to 10 atom % with respect to the carbon in the graphene layers.
Potential Applications
This technology has potential applications in various fields, including:
- Electronics industry
- Semiconductor manufacturing
- Integrated circuit design
- Nanotechnology research
Problems Solved
The interconnect structure described in this patent application addresses the following problems:
- Improving the performance and reliability of interconnects in electronic devices.
- Enhancing the conductivity and stability of graphene-based interconnects.
- Minimizing the resistance and power consumption in interconnects.
Benefits
The use of this interconnect structure offers several benefits, such as:
- Improved electrical conductivity and signal transmission.
- Enhanced mechanical strength and durability.
- Reduced resistance and power loss.
- Increased reliability and lifespan of electronic devices.
Original Abstract Submitted
An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.
